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| BL Galaxy Electrical Small Signal MOSFET Transistor FEATURES High Density Cell Design For Low RDS(ON) Voltage Controlled Small Switch. Rugged and Reliable. High Saturation Current Capability. Production specification 2N7002 Pb Lead-free APPLICATIONS N-channel enhancement mode effect transistor. Switching application. SOT-23 ORDERING INFORMATION Type No. 2N7002 Marking 3P Package Code SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol VDSS VDGR VGSS ID PD RJA Parameter Drain-Source voltage Drain-Gate voltage(RGS1M) Gate -Source voltage - continuous -Non Repetitive (tp<50s) Maximum Drain current Power Dissipation Thermal resistance,Junction-to-Ambient -continuous -Pulsed Value 60 60 20 40 115 800 200 625 Units V V V mA mW /W TJ, Tstg Junction and Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Document number: BL/SSMTC008 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Small Signal MOSFET Transistor Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-body Leakage Forward Reverse Symbol V(BR)DSS VGS(th) IGSS Test conditions VGS=0V,ID=10A VDS=VGS, ID=250A VDS=0V, VGS=20V VDS=0V, VGS=-20V VDS=60V, VGS=0V Zero Gate Voltage Drain Current On-state Drain Current Drain-Source on-voltage Forward transconductance IDSS VDS=60V,VGS=0V,Tj=125 ID(On) VDS(ON) gFS VGS=10V, VDS2.0VDS(ON) VGS=10V,ID=500mA VGS=5V,ID=50mA VDS2.0VDS(ON),ID=200mA VGS=10V,ID=500mA VGS=10V,ID=500mA,Tj=100 VGS=5.0V,ID=50mA VGS=5.0V,ID=50mA, Tj=100 VGS=0V,ID=115mA Production specification 2N7002 MIN 60 1 2.1 2.5 100 -100 1 A 500 500 2700 0.6 0.09 80 320 1.2 1.7 1.7 2.4 0.88 20 7.5 13.5 7.5 13.5 1.5 50 25 5 20 20 ns ns pF 3.75 1.5 mA V mS TYP MAX UNIT V nA Static drain-Source on-resistance RDS(ON) Drain-Source diode forward voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-On Delay Time Turn-Off Delay Time VSD CISS COSS CRSS tD(ON) tD(OFF) V VDS=25V,VGS=0V,f=1.0MHz VDD = 30V, ID= 0.2A, RL = 150, VGS= 10V, RGEN= 25 11 4 TYPICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Document number: BL/SSMTC008 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Small Signal MOSFET Transistor Production specification 2N7002 Document number: BL/SSMTC008 Rev.A www.galaxycn.com 3 BL Galaxy Electrical Small Signal MOSFET Transistor PACKAGE OUTLINE Plastic surface mounted package Production specification 2N7002 SOT-23 A E SOT-23 Dim A B C D Min 2.85 1.25 0.37 0.35 1.85 0.02 2.35 Max 2.95 1.35 0.43 0.48 1.95 0.1 2.45 K B 1.0Typical D G J E G H H C J K 0.1Typical All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE Device 2N7002 INFORMATION Package SOT-23 Shipping 3000/Tape&Reel Document number: BL/SSMTC008 Rev.A www.galaxycn.com 4 |
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